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| RED 1. 2. 2.1 2.2 Item No.: 115180 This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs 265 120 180 Active Layer p-Epitaxy GaAlAs p-Electrode 265 Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditions IF = 20 mA VR = 5 V min typ 1,90 max 2,30 10 Unit V A mcd nm Luminous intensity * IV IF = 20 mA Peak wavelength IF = 20 mA P Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max 22 28 655 Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 115180
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